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Hyunsu Ju

INFO

  • 소속캠퍼스한국과학기술연구원 스쿨
  • 전공 나노-정보 융합
    (나노재료공학)
  • 연락처02-958-5362
  • 출신전공Nuclear Plasma and Radiological Engineering
  • 학위박사
  • 최종출신대학University of Illinois, Urbana Champaign
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연구분야

화합물 반도체, 뉴메모리

III-V semiconductor, New Memory

대표연구실적

-  Hyunsu Ju, Eunmi Kim, Yoocheol Shin, Min Kyu Yang, Jungdal CHOI/Resistive random access memory devices having variable resistance layers and related methods/US9059395/06-15-2015 -  Hyun-Su Ju, Min-Kyu YANG, Eun-Mi Kim, Seong-Geon Park/Nonvolatile stacked memory structure with a resistance change film between a vertical electrode and horizontal electrodes/US8785899/07-22-2014 -  Min Kyu Yang, Hyunsu Ju, Gun Hwan Kim, Jeon-Kook Lee, Han-Cheol Ryu/Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film/Scientific Reports/09-14-2015

논문(최근 5년)

-  Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film[Scientific Reports,2015-09-14] -  The interfacial layer effect on bi-stable resistive switching phenomenon in MnOx thin film[Applied Physics Letters,2015-08-05] -  An analysis of “non-lattice” oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film[Applied Physics Letters,2015-02-03] -  Nonvolatile Charge Injection Memory Based on Black Phosphorous 2D Nanosheets for Charge Trapping and Active Channel Layers[Advanced functional materials,2016-08-01] -  Correlation of nanostructure changes with the electrical properties of molybdenum disulfide (MoS2) as affected by sulfurization temperature[ APPLIED PHYSICS LETTERS,2016-12-15]

특허(최근 5년)

-  Resistive random access memory devices having variable resistance layers and related methods[2015-07-16] -  Semiconductor memory devices[2014-09-02] -  Nonvolatile stacked memory structure with a resistance change film between a vertical electrode and horizontal electrodes[2014-07-22] -  Non-volatile memory device having a resistance-changeable element and method of forming the same[2014-11-11] -  Non-volatile memory device having variable resistance element[2013-09-03] -  Methods of operating variable resistance memory devices[2016-06-28]