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김상현 교수

SANGHYEON KIM

INFO

  • 소속캠퍼스한국과학기술연구원 스쿨
  • 연락처02-958-5561
  • 출신전공Electrical engineering
  • 학위박사
  • 최종출신대학University of Tokyo
  • 이메일

연구분야

III-V족 화합물 반도체 광전소자

Opto-electronic devices using III-V compound semiconductor

대표연구실적

-  “Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications”, Scientific reports 6, 20610, 2016 -  “Direct Wafer Bonding Technology for Large-scale InGaAs-On-Insulator Transistors”, Applied Physics Letters, Vol 104, 043504, 2014 -  “High Performance Tri-gate Extremely-thin-Body InAs-on-Insulator MOSFETs with high short channel effect immunity and Vth tunability”, IEEE Transactions on electron device, Vol 61, p. 1354, 2014

논문(최근 5년)

-  Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties[ JOURNAL OF APPLIED PHYSICS,2012-10-24] -  High Mobility CMOS Technologies using III-V/Ge Channels on Si platform[ SOLID-STATE ELECTRONICS,2013-04-29] -  Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks[ MICROELECTRONIC ENGINEERING,2013-03-26] -  Experimental Study on Electron Mobility in InxGa1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering[ IEEE TRANSACTIONS ON NANOTECHNOLOGY,2013-06-03] -  Sub-60 nm Extremely-thin Body InxGa1-xAs-On-Insulator MOSFETs on Si with Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and its scalability[ IEEE TRANSACTIONS ON ELECTRON DEVICES,2013-06-19] -  Formation of III-V-On-Insulator Structures on Si by Direct Wafer Bonding[ SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2013-08-21] -  High Performance InAs-On-Insulator nMOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology[ IEEE TRANSACTIONS ON ELECTRON DEVICES,2013-08-07] -  Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors[ APPLIED PHYSICS LETTERS,2013-10-04] -  Biaxially strained Extremely-thin Body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates and Physical Understanding on their electron mobility[ JOURNAL OF APPLIED PHYSICS,2013-10-31] -  Impact of Fermi level pinning due to interface traps inside conduction band on the inversion-layer mobility in InxGa1-xAs metal-oxide-semiconductor field effect transistors[IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY,2013-12-12] -  Tunnel Field-Effect Transistors with Germanium/Strained-Silicon Hetero-junctions for Low Power Applications[ THIN SOLID FILMS,2013-10-25] -  Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys[JOURNAL OF APPLIED PHYSICS,2014-01-17] -  Self-aligned Ni?GaSb source/drain junctions for GaSb p-channel metal-oxide- semiconductor field-effect transistors[ APPLIED PHYSICS LETTERS,2014-03-09] -  Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation[ APPLIED PHYSICS LETTERS,2014-03-20] -  High Performance Tri-gate Extremely-thin-Body InAs-on-Insulator MOSFETs with high short channel effect immunity and Vth tunability[ IEEE TRANSACTIONS ON ELECTRON DEVICES,2014-04-18] -  Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors[ APPLIED PHYSICS LETTERS,2014-06-30] -  Direct Wafer Bonding Technology for Large-scale InGaAs-On-Insulator Transistors[ APPLIED PHYSICS LETTERS,2014-06-29] -  In0.53Ga0.47As-On-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistors Utilizing Y2O3 Buried Oxide[ IEEE ELECTRON DEVICE LETTERS,2015-04-21] -  Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate[ CURRENT APPLIED PHYSICS,2015-04-23] -  III?V/Ge channel MOS device technologies in nano CMOS era[ JAPANESE JOURNAL OF APPLIED PHYSICS,2015-05-07] -  GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding[ SOLAR ENERGY MATERIALS AND SOLAR CELLS,2015-06-10] -  High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions[ JOURNAL OF APPLIED PHYSICS,2015-06-28] -  Enhanced open-circuit voltage of InAs/GaAs quantum dot solar cells by hydrogen plasma treatment[ JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2015-06-20] -  InGaP/GaAs heterojunction phototransistors transferred to a Si substrate by metal wafer bonding combined with epitaxial lift-off[ OPTICS EXPRESS,2015-10-05] -  Optical Design of ZnO-based Antireflective Layers for Enhanced GaAs Solar Cell Performance[ PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2015-12-21] -  Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications[SCIENTIFIC REPORTS,2016-02-11] -  Indium-tin-oxide/GaAs schottky barrier solar cells with embedded InAs Quantum dots[ THIN SOLID FILMS,2016-03-14] -  Fully Subthreshold Current-Based Characterization of Interface Traps and Surface Potential in III-V-on-Insulator MOSFETs[ SOLID-STATE ELECTRONICS,2016-04-21] -  Proton irradiation-induced intermixing in InGaAs/GaAs quantum well for non-absorbing mirror[ CURRENT APPLIED PHYSICS,2016-05-30] -  III-V/Ge MOS device technologies for low power integrated systems[ SOLID-STATE ELECTRONICS,2016-07-20] -  Low subthreshold-slope Double-gate GaAs Field-Effect-Transistors on Si[ IEEE ELECTRON DEVICE LETTERS,2016-09-23] -  Influence of interface traps inside the conduction band on the capacitance?voltage[ APPLIED PHYSICS EXPRESS,2016-10-06] -  Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors[ CURRENT APPLIED PHYSICS,2017-01-09] -  Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density[ APPLIED PHYSICS LETTERS,2017-01-23] -  Fabrication of a vertically-staked passive-matrix micro-LED array structure for a dual color display[ OPTICS EXPRESS,2017-01-31]

특허(최근 5년)

-  초 미세 Al 박막 기반의 산화아연 나노시트 비반사막 및 이를 포함하는 태양전지[2016-12-05] -  박막형 적외선 흡수체 구조 디자인 및 제작방법[2016-12-02] -  광전-열전 융합 발전 소자 제조 방법[2016-10-06] -  SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE [2016-03-23] -  SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING SAME[2016-03-09] -  SEMICONDUCTOR DEVICE, METHOD OF PRODUCING SAME AND INTEGRATED CIRCUITS[2015-01-09] -  SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING SAME[2014-12-02]