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김경중 교수

Kim, Kyung Joong

INFO

  • 소속캠퍼스한국표준과학연구원
  • 연락처042-868-5391
  • 출신전공물리화학
  • 학위박사
  • 최종출신대학한국과학기술원
  • 이메일

연구분야

표면분석 및 차세대 태양전지

Surface Analysis and Next Generation Solar Cell

대표연구실적

-  J. S. Jang, H. H. Hwang, H. J. Kang, J. K. Suh, H. S. Min, M. S. Han, K. H. Cho, Y. D. Chung, D. H. Cho, J. Kim and K. J. Kim / Analysis of Cu(In,Ga)Se2 Thin Films by Secondary Ion Mass Spectrometry using Total Number Counting Method / Metrologia / 2012 -  K. J. Kim, J. S. Jang, J.-H. Lee, Y.-J. Jee and C.-S. Jun / Determination of the Absolute Thickness of Ultra-thin Al2O3 Overlayers on Si (100) Substrate / Anal. Chem, / 2009 -  S. H. Hong, Y. S. Kim, W. Lee, Y. H. Kim, J. Y. Song, J. S. Jang, H. J. Park, S.-H. Choi, and K. J. Kim / Active doping of B in silicon nanostructures and development of Si quantum dot solar cell / Nanotechnology / 2011

논문(최근 5년)

-  In-situ determination of the pore opening point during wet-chemical etching of the barrier layer of porous anodic aluminum oxide (AAO): Non-uniform impurity distribution in anodic oxide.[ACS Applied Materials & Interfaces,2013-03-22] -  In-situ control of oxygen vacancy in TiO2 by atomic layer deposition (ALD) for resistive switching devices.[NANOTECHNOLOGY,2013-06-25] -  ED-EPMA measurements of elemental composition and thickness of Fe-Ni alloy films[SURF INTERFACE ANAL,2012-11-25] -  Interface formation between ZnO nanorod arrays and polymers(PCBM and P3HT) for organic solar cells[Journal of Physical Chemistry C,2012-11-19] -  Nanocluster Si sensitized Er luminescence: excitation mechanisms and critical factors for population inversion[APPLIED PHYSICS LETTERS,2012-10-04] -  Graded-size Si-nanocrystal-multilayer solar cells[JOURNAL OF APPLIED PHYSICS,2012-12-25] -  Structures and Stabilities of Asymmetric Fullerene Dimers: A Density Functional Theory Study[Journal of the Korean Physical Society,2013-12-23] -  ED-EPMA measurements of elemental composition and thickness of Fe-Ni alloy films[SURF INTERFACE ANAL,2013-04-18] -  Accurate quantification of Cu(InGa)Se2 films by AES depth profiling analysis[APPLIED SURFACE SCIENCE,2013-06-01] -  Evidence for light-induced oxygen exchange in the oxidation of liquid hydrocarbons on oxygen 18-labelled titanium dioxide[RSC ADV,2013-04-09] -  Junction formation at the interface of CdS/CuInxGa(1.x)Se2[JOURNAL OF PHYSICS D-APPLIED PHYSICS,2014-07-09] -  VAMAS round robin study to evaluate a correction method for saturation effect in DSIMS[SURF INTERFACE ANAL,2014-05-12] -  SIMS depth profiling analysis of P-doped n-type Si layer to develop the Si QD solar cell[SURF INTERFACE ANAL,2014-01-15] -  Mechanism of Abnormal Interface Artifacts in SIMS Depth Profiling of a Si/Ge Multilayer by Oxygen Ions[SURF INTERFACE ANAL,2014-01-28] -  SIMS study on the improvement of electrical conductivity of a Si quantum dot layer by insertion of polycrystalline Si interlayers[SURF INTERFACE ANAL,2013-12-12] -  Determination of interface locations and layer thicknesses in SIMS and AES depth profiling of Si/Ti multilayer films by 50 at% definition[SURF INTERFACE ANAL,2014-01-19]

특허(최근 5년)

-  양자점 태양광 소자 및 그 제조 방법[2013-03-15] -  실리콘 양자점에 의한 광활성층 및 이의 제조방법[2012-10-04]