본문 바로가기 대메뉴 바로가기
김용성 교수

Kim, Yong-Sung

INFO

  • 소속캠퍼스한국표준과학연구원
  • 전공 나노계측과학
  • 연락처042-868-5828
  • 출신전공고체물리이론
  • 학위박사
  • 최종출신대학한국과학기술원
  • 이메일

연구분야

전산고체물리

Computational Condensed Matter Physics

대표연구실적

-  Yong-Sung Kim and C. H. Park/Rich Variety of Defects in ZnO via an Attractive Interaction between O Vacancies and Zn Interstitials: Origin of n-Type Doping/Physical Review Letters/2009년2월 -  Yong-Sung Kim, Ja-Yong Koo, and Hanchul Kim/Interplay of Hydrogen-Bond and Coordinate Covalent-Bond Interactions in Self-Assembly of NH3 Molecules on the Si(001) Surface/Physical Review Letters/2008년 6월 -  Yong-Sung Kim and K. J. Chang / Structural Transformation in the Formation of H-Induced (111) Platelets in Si/2001년2월

논문(최근 5년)

-  Inversion domain boundaries on tin (Sn)-doped ZnO nanobelts: Aberrationcorrected scanning transmission electron microscopy study[APPLIED PHYSICS LETTERS,2013-01-22] -  Electron doping limit in Al-doped ZnO by donor-acceptor interactions[JOURNAL OF APPLIED PHYSICS,2013-04-15] -  Role of lone-pair electrons in Sb-doped amorphous InGaZnO4: Suppression of the hole-induced lattice instability[APPLIED PHYSICS LETTERS,2013-04-15] -  Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors[JOURNAL OF APPLIED PHYSICS,2013-05-09] -  Positive exchange bias in thin film multilayers produced with nano-oxide layer[APPLIED PHYSICS LETTERS,2013-06-27] -  Length-dependent lattice thermal conductivity of graphene and its macroscopic limit[JOURNAL OF APPLIED PHYSICS,2013-08-02] -  Electronic states of disordered grain boundaries in graphene prepared by chemical vapor deposition[CARBON,2013-07-26] -  Electronic transport through ordered and disordered graphene grain boundaries[CARBON,2013-07-19] -  Bistability of Hydrogen in ZnO: Origin of Doping Limit and Persistent Photoconductivity[Scientific Reports,2014-02-18] -  Twin-driven thermoelectric figure-of-merit enhancement of Bi2Te3 nanowires[Nanoscale,2014-03-28] -  Stability and electronic structures of native defects in single-layer MoS2[PHYSICAL REVIEW B,2014-05-19] -  Understanding the presence of vacancy clusters in ZnO from a kinetic perspective[APPLIED PHYSICS LETTERS,2014-06-23] -  Lattice thermal conductivity of crystalline and amorphous silicon with and without isotopic effects from the ballistic to diffusive thermal transport regime[Journal of Applied Physics,2014-07-28] -  Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors[ APPLIED PHYSICS LETTERS,2014-10-17] -  UnderCoordinated Indium as an Intrinsic Electron Trap Center in Amorphous InGaZnO4[NPG Asia Materials,2014-11-14] -  Deep-to-shallow level transition of Re and Nb dopants in monolayer MoS2 with dielectric environments[ PHYSICAL REVIEW B,2015-09-21] -  Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy[ JOURNAL OF APPLIED PHYSICS,2015-10-05] -  Shallow donor in natural MoS2[Physica Status Solidi - Rapid Research Letetrs,2015-10-21] -  Vibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron[ SCIENTIFIC REPORTS,2015-11-13] -  Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors[ SCIENTIFIC REPORTS,2016-07-05] -  Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type and Optical Response in Monolayer MoSe2-x Crystals[ NANO LETTERS,2016-07-14] -  Interplay between intercalated oxygen superstructures and monolayer h-BN on Cu(100)[ PHYSICAL REVIEW B,2016-08-18] -  Strain-controlled boron and nitrogen doping of amorphous carbon layers for hard mask applications[ DIAMOND AND RELATED MATERIALS,2016-08-14] -  The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy[ SCIENTIFIC REPORTS,2016-07-22] -  Stabilization of a Ga-adlayer structure with the zincblende stacking sequence in the GaN(000-1) surface at the nanoscale[ NANOSCALE,2017-01-14] -  Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors[ IEEE ELECTRON DEVICE LETTERS,2017-03-10] -  Lattice Thermal Conductivity of Pristine Si Nanowires: Classical Nonequilibrium Molecular Dynamics Study[ NANOSCALE AND MICROSCALE THERMOPHYSICAL ENGINEERING,2017-03-22] -  Experimental decomposition of the positive bias temperature stress-induced instability in self-aligned coplanar InGaZnO thin-film transistors and its modeling based on the multiple stretched-exponential functions[ JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY,2017-02-25]