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이상준 교수

LEE, SANG JUN

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  • 소속캠퍼스한국표준과학연구원
  • 전공 나노계측과학
  • 연락처0428685127
  • 출신전공반도체 물리학
  • 학위박사
  • 최종출신대학경희대학교
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연구분야

반도체물리, 광전자공학, 나노소자, 적외선검출기, 표면플라즈몬

semiconductor physics,optoelectronics, nano device, infrared detector, surface plasmon

대표연구실적

-  S. J. Lee et al.,"A monolithically integrated plasmonic infrared quantum dot camera", Nature Comm. DOI:10.1038/ncomms1283 (2011) -  Z. Ku et al., “Analysis of subwavelength metal hole array structure for the enhancement of backilluminated quantum dot infrared photodetectors”, Optics express 21(4) 4710 (2013) -  S. J. Lee et al., "Subband transitions in dual-band n-B-n InAs/GaSb superlattice infrared photodetector identified by photoresponse spectra", Appl. Phys. Lett. 95(10), 102106-1-3 (2009).

논문(최근 5년)

-  Formation Characteristics of a Self-catalyzed GaAs Nanowire without a Ga Droplet on Si(111)[J. Korean Phys. Soc.,2012-12-01] -  Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors[Appl. Phys. Lett.,2013-01-11] -  MOCVD of C-oriented Bi2Te3 Films on SiO2 Substrates using Triethyl Bismuth and Di-tertiarybutyl Tellurium[Chem. Vap. Deposition,2013-02-12] -  Analysis of subwavelength metal hole array structure for the enhancement of backilluminated quantum dot infrared photodetectors[Optics express,2013-02-25] -  Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate[J. Vac. Sci. Technol. B,2013-04-08] -  Effect of barrier on the performance of sub-monolayer quantum dot infrared photodetectors[Optical Materials Express,2014-02-01] -  Non-Lithographic Growth of Core-Shell GaAs Nanowires on Si for Optoelectronic Applications[Cryst. Growth Des.,2014-02-28] -  Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor[J. Vac. Sci. Technol. A,2014-04-11] -  Simulation and analysis of grating-integrated quantum dot infrared detectors for spectral response control and performance enhancement[J. Appl. Phys.,2014-04-22] -  Transition behaviors in biased asymmetric quantum dot-in-doublewell photodetector[ CURRENT APPLIED PHYSICS,2014-03-12] -  Enhanced transmission due to antireflection coating layer at surface plasmon resonance wavelengths[ OPTICS EXPRESS,2014-11-25] -  Incident angular dependence of surface plasmon polariton modes for thermal imaging[ ELECTRONICS LETTERS,2014-11-12] -  Investigation of Internal Electric Fields in GaAs Solar Cell under Highly-concentrated Light[ JOURNAL OF THE KOREAN PHYSICAL SOCIETY,2015-02-04] -  Dark Current Improvement of the Type-II InAs / GaSb Superlattice photodetectors by Using a Gate Bias Control[ JOURNAL OF THE KOREAN PHYSICAL SOCIETY,2015-02-04] -  Catalyst-free heteroepitaxial growth of very long InAs nanowires on Si[ CURRENT APPLIED PHYSICS,2015-04-17] -  Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays[ SCIENTIFIC REPORTS,2015-06-02] -  Surface plasmon resonant splitting and merging due to infrared incidence through thermal imaging lens[ ELECTRONICS LETTERS,2015-07-23] -  Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell[ CURRENT APPLIED PHYSICS,2015-07-01] -  Optically biased photoreflectance spectroscopy of a GaAs epitaxial layer and an AlGaAs/GaAs quantum well[ CURRENT APPLIED PHYSICS,2015-07-07] -  Evaluation of the Photo-generated Carrier Density of GaAs Solar Cells by Using Electrical and Optical Biased Electroreflectance Spectroscopy[ JOURNAL OF THE KOREAN PHYSICAL SOCIETY,2015-08-04] -  Investigation of the shape of submonolayer quantum dots using polarization-dependent photocurrent[ SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2015-09-07] -  Structural and electrical properties of catalyst-free Sidoped InAs nanowires formed on Si(111)[ SCIENTIFIC REPORTS,2015-11-19] -  A Large-Area, Mushroom-Capped Plasmonic Perfect Absorber: Refractive Index Sensing and Fabry?Perot Cavity Mechanism[ ADVANCED OPTICAL MATERIALS,2015-09-15] -  Low-temperature growth of layered molybdenum disulphide with controlled clusters[ SCIENTIFIC REPORTS,2016-02-23] -  Fabrication and characterization of InAs/InGaAs sub-monolayer quantum dot solar cell with dot-in-a-well structure[ CURRENT APPLIED PHYSICS,2016-03-03] -  Effects of doping and planar defects on the thermoelectric properties of InAs nanowires[ RSC ADVANCES,2016-01-10] -  Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer[ APPLIED PHYSICS LETTERS,2016-03-09] -  Efficiency limitofInAs/GaAs quantum dot solar cells attributed to quantum dot size effects[ SOLAR ENERGY MATERIALS AND SOLAR CELLS,2016-04-26] -  Selective Deposition of Cobalt Oxide Thin Films via H2O-Vapor-Catalyzed Reaction[ JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2016-06-20] -  Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well[ JOURNAL OF PHYSICS D-APPLIED PHYSICS,2016-07-07] -  Improvement of Terahertz Wave Radiation for InAs Nanowires by Simple Dipping into Tap Water[ SCIENTIFIC REPORTS,2016-10-26] -  Experimental Demonstration of Adaptive Infrared Multispectral Imaging using Plasmonic Filter Array[ SCIENTIFIC REPORTS,2016-10-10] -  A Low-loss Metasurface Antireflection Coating onDispersive Surface Plasmon Structure[ SCIENTIFIC REPORTS,2016-11-02] -  Investigation of Localized Electric Field in the Type-II InAs/GaAsSb/GaAs Structure[ ACTA PHYSICA POLONICA A,2016-11-01] -  Dependence on the Incident Light Power of the Internal Electric Fields in a GaAs p-i-n Solar Cell According to Bright Photoreflectance Spectroscopy[ JOURNAL OF THE KOREAN PHYSICAL SOCIETY,2016-04-04] -  Metamaterial Perfect Absorber Analyzed by a Meta-cavity Model Consisting of Multilayer Metasurfaces[ SCIENTIFIC REPORTS,2017-09-05] -  Stranski.Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells[ APPLIED PHYSICS LETTERS,2017-08-17] -  Angle-Dependent Spoof Surface Plasmons in Metallic Hole Arrays at Terahertz Frequencies[ IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,2017-07-01] -  Origin of the Reduction in the Junction Electric Field of an InAs/GaAs Quantum-Dot Solar Cell[새물리,2017-04-01] -  Formation of GeO2 complex composed nanostructures by the vapor liquid solid method[ JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017-03-06] -  Short wavelength infrared photodetector and light emitting diode based on InGaAsSb[Proceedings of SPIE - The International Society for Optical Engineering,2017-05-16] -  Long wavelength infrared photodetector using submonolayer quantum dots[Proceedings of SPIE - The International Society for Optical Engineering,2016-05-20]

특허(최근 5년)

-  다중파장적외선영상센서 및 그 제조 방법[2013-10-18] -  공정가스분석장치[2017-05-08] -  주파수 변조가 가능한 고효율 테라헤르츠 트랜스시버[2016-05-27] -  무반사층이 결합된 플라즈모닉 적외선 소자[2016-05-20] -  공기와 표면플라즈마 공명기 사이의 임피던스를 정합시키기 위하여 메타물질에 기반한 무반사코팅을 이용한 적외선 광검출기[2015-05-20] -  금속 디스크 어레이를 구비한 적층형 태양전지[2017-09-26]