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이상준 교수

LEE, SANG JUN

INFO

  • 소속캠퍼스한국표준과학연구원
  • 연락처0428685127
  • 출신전공반도체 물리학
  • 학위박사
  • 최종출신대학경희대학교
  • 이메일

연구분야

반도체물리, 광전자공학, 나노소자, 적외선검출기, 표면플라즈몬

semiconductor physics,optoelectronics, nano device, infrared detector, surface plasmon

대표연구실적

-  S. J. Lee et al.,"A monolithically integrated plasmonic infrared quantum dot camera", Nature Comm. DOI:10.1038/ncomms1283 (2011) -  Z. Ku et al., “Analysis of subwavelength metal hole array structure for the enhancement of backilluminated quantum dot infrared photodetectors”, Optics express 21(4) 4710 (2013) -  S. J. Lee et al., "Subband transitions in dual-band n-B-n InAs/GaSb superlattice infrared photodetector identified by photoresponse spectra", Appl. Phys. Lett. 95(10), 102106-1-3 (2009).

논문(최근 5년)

-  Formation Characteristics of a Self-catalyzed GaAs Nanowire without a Ga Droplet on Si(111)[J. Korean Phys. Soc.,2012-12-01] -  Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors[Appl. Phys. Lett.,2013-01-11] -  MOCVD of C-oriented Bi2Te3 Films on SiO2 Substrates using Triethyl Bismuth and Di-tertiarybutyl Tellurium[Chem. Vap. Deposition,2013-02-12] -  Analysis of subwavelength metal hole array structure for the enhancement of backilluminated quantum dot infrared photodetectors[Optics express,2013-02-25] -  Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate[J. Vac. Sci. Technol. B,2013-04-08] -  Effect of barrier on the performance of sub-monolayer quantum dot infrared photodetectors[Optical Materials Express,2014-02-01] -  Non-Lithographic Growth of Core-Shell GaAs Nanowires on Si for Optoelectronic Applications[Cryst. Growth Des.,2014-02-28] -  Transition behaviors in biased asymmetric quantum dot-in-doublewell photodetector[Current Applied Phys.,2014-03-12] -  Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor[J. Vac. Sci. Technol. A,2014-04-11] -  Simulation and analysis of grating-integrated quantum dot infrared detectors for spectral response control and performance enhancement[J. Appl. Phys.,2014-04-22]

특허(최근 5년)

-  다중파장적외선영상센서 및 그 제조 방법[2013-10-18]